Large magnetoresistance in (In, Zn)As/InAs p-n junction

We study the magnetotransport property of a (In, Zn)As/InAs p-n junction and observe a breakdown behavior in the reverse bias region. This breakdown behavior can be attributed to two different electronic processes: the trap-assisted tunneling at moderate reverse voltage and the impact ionization at high reverse voltage. The former gives rise to a positive magnetoresistance, and a maximum of 226% is obtained at room temperature. The latter induces a very large positive magnetoresistance and its maximum of 428% is observed at a reverse voltage of 1.32 V.