@inproceedings{3777a951513e46dab16434445bfcf876,
title = "Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation",
abstract = "In this study, novel Si 2Sb 2Te 6 phase change material is investigated in detail for the phase change memory application using transmission electron microscopy and X-ray photoelectron spectroscopy. The phenomenon that Te diffuses to the film surface during phase switching and successively evaporates out has been confirmed. The phase change memory cells employing Si 2Sb 2Te 6 and Si 3Sb 2Te 3 materials are fabricated and programmed. For the Si 2Sb 2Te 6-based cell a data endurance of 5{\texttimes}10 5 cycles is achieved with a failure mode resembling reset stuck, which can be attributed to the migration of Tellurium during the operation cycles. It means that a thermally stable material system of Si xSb 2Te 3 is preferred for the PCM applications.",
author = "Xilin Zhou and Liangcai Wu and Zhitang Song and Feng Rao and Kun Ren and Yan Cheng and Bo Liu and Dongning Yao and Songlin Feng and Bomy Chen",
year = "2011",
doi = "10.1557/opl.2011.979",
language = "英语",
isbn = "9781605113142",
series = "Materials Research Society Symposium Proceedings",
pages = "123--128",
booktitle = "New Functional Materials and Emerging Device Architectures for Nonvolatile Memories",
note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",
}