Investigation of the light hole in p-type Hg_{1 - X}Cd_xTe

We have simultaneously determined the densities and mobilities of light and heavy holes at various temperatures (1.2 K to 300 K) in two molecular beam epitaxy-grown p-type Hg_{1 - cursive Greek chi}Cd_{cursive Greek chi}Te (cursive Greek chi = 0.224) samples from variable magnetic-field Hall measurement by using a hybrid approach consisting of mobility spectrum analysis followed by a multi-carrier fitting procedure. In addition, we directly observe the contribution of the light hole to the conductivity tensor component. The experimental values obtained in this work should be useful in modeling of HgCdTe infrared detectors.