摘要
10 period p-Si/Si0.5Ge0.5superlattices grown on Si (001) substrate by MBE, with 8° and 0° tilted, the laser induced thermoelectric voltages (LITV) were measured under femtosecond laser. The larger induced peak voltages were obtained in films grown on tilting direction, while a smaller induced voltage were measured in films on untilted substrate. The results demonstrated that the Si/Si0.5Ge0.5 superlattices show anisotropic Seebeck components in tilting and untilting direction for films grown on vicinal cut substrates. This is very meaningful for developing the detectors with broad optical response and fast response.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 245-248 |
| 页数 | 4 |
| 期刊 | Guangzi Xuebao/Acta Photonica Sinica |
| 卷 | 37 |
| 期 | SUPPL. 2 |
| 出版状态 | 已出版 - 12月 2008 |
指纹
探究 'Investigation of LITV signal of Si/Si0.5Ge0.5 super lattices' 的科研主题。它们共同构成独一无二的指纹。引用此
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