跳到主要导航 跳到搜索 跳到主要内容

Investigation of filling factor in In0.53Ga0.47As/In0.52 Al0.48As quantum wells with two occupied subbands

  • Li Yan Shang*
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Shao Ling Guo
  • , Dong Lin Li
  • , Hong Ling Gao
  • , Li Jie Cui
  • , Yi Ping Zeng
  • , Jun Hao Chu
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • Guangxi University
  • CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The magnetic field dependence of filling factors has been investigated on InP based In0.53Ga0.47As/In0.52 Al0.48As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 K in a magnetic field range of 0 to 13 T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. ΔE21 = khwc. If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i.e. ΔE21 = (2k + 1) hwc/2, the filling factor is odd.

源语言英语
页(从-至)3818-3822
页数5
期刊Wuli Xuebao/Acta Physica Sinica
卷57
期6
出版状态已出版 - 2008

学术指纹

探究 'Investigation of filling factor in In0.53Ga0.47As/In0.52 Al0.48As quantum wells with two occupied subbands' 的科研主题。它们共同构成独一无二的学术指纹。

引用此