Investigation of AlN thin films prepared by pulsed excimer laser deposition

Jipo Huang; Lianwei Wang; Jianxia Gao; Chenglu Lin; Yanping Zhou

Investigation of AlN thin films prepared by pulsed excimer laser deposition

Jipo Huang^*
, Lianwei Wang
, Jianxia Gao
, Chenglu Lin
, Yanping Zhou

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The (101) oriented AlN thin films have been successfully grown on Si (111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 10⁸Ω.

源语言	英语
页（从-至）	815-818
页数	4
期刊	Zhongguo Jiguang/Chinese Journal of Lasers
卷	26
期	9
出版状态	已出版 - 9月 1999
已对外发布	是

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@article{5393e05542a0418db35a4d5b59f21636,

title = "Investigation of AlN thin films prepared by pulsed excimer laser deposition",

abstract = "The (101) oriented AlN thin films have been successfully grown on Si (111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 108Ω.",

author = "Jipo Huang and Lianwei Wang and Jianxia Gao and Chenglu Lin and Yanping Zhou",

year = "1999",

month = sep,

language = "英语",

volume = "26",

pages = "815--818",

journal = "Zhongguo Jiguang/Chinese Journal of Lasers",

issn = "0258-7025",

publisher = "Chinese Laser Press",

number = "9",

}

TY - JOUR

T1 - Investigation of AlN thin films prepared by pulsed excimer laser deposition

AU - Huang, Jipo

AU - Wang, Lianwei

AU - Gao, Jianxia

AU - Lin, Chenglu

AU - Zhou, Yanping

PY - 1999/9

Y1 - 1999/9

N2 - The (101) oriented AlN thin films have been successfully grown on Si (111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 108Ω.

AB - The (101) oriented AlN thin films have been successfully grown on Si (111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 108Ω.

UR - https://www.scopus.com/pages/publications/0033189678

M3 - 文章

AN - SCOPUS:0033189678

SN - 0258-7025

VL - 26

SP - 815

EP - 818

JO - Zhongguo Jiguang/Chinese Journal of Lasers

JF - Zhongguo Jiguang/Chinese Journal of Lasers

IS - 9

ER -

Investigation of AlN thin films prepared by pulsed excimer laser deposition

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