TY - JOUR
T1 - Inverted All-Inorganic CsPbI2Br Perovskite Solar Cells with Promoted Efficiency and Stability by Nickel Incorporation
AU - Chen, Lijun
AU - Wan, Li
AU - Li, Xiaodong
AU - Zhang, Wenxiao
AU - Fu, Sheng
AU - Wang, Yueming
AU - Li, Shuang
AU - Wang, Hai Qiao
AU - Song, Weijie
AU - Fang, Junfeng
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/11/12
Y1 - 2019/11/12
N2 - All-inorganic CsPbI2Br perovskite solar cell with an inverted architecture of indium-tin oxide/poly[3-(4-carboxylbutyl)thiophene]/ CsPbI2Br/(6,6)-phenyl-C61-butyric acid methyl ester/C60/bathocuproine/ Ag was fabricated. Together with the incorporation of nickel iodide, perovskite crystallinity and film morphology were promoted. Also, suppressed trap-state density in perovskite film was accomplished due to the passivation effect. Consequently, enhanced champion efficiency of 13.88% with VOC of 1.141 V, JSC of 16.02 mA/cm2, and fill factor of 75.96% was delivered by the doped optimal device, compared with the efficiency of 11.97% of the reference device. Superior device stability was demonstrated for the optimal device both in ambient atmosphere and N2-filled glovebox, without encapsulation. Moreover, improved light stability was also confirmed for optimal device by prolonged operation time, under continuous illumination of simulated solar spectrum. In addition, high-temperature annealing or sintering of interlayer was eliminated by utilizing solution-processed poly[3-(4-carboxylbutyl)thiophene]-CH3NH2 (P3CT-CH3NH2) as the hole-transport layer. This work provides an alternative inverted architecture and an effective ion-doping strategy for efficient and stable all-inorganic perovskite solar cells (PSCs), which would help promote the development of PSC technology.
AB - All-inorganic CsPbI2Br perovskite solar cell with an inverted architecture of indium-tin oxide/poly[3-(4-carboxylbutyl)thiophene]/ CsPbI2Br/(6,6)-phenyl-C61-butyric acid methyl ester/C60/bathocuproine/ Ag was fabricated. Together with the incorporation of nickel iodide, perovskite crystallinity and film morphology were promoted. Also, suppressed trap-state density in perovskite film was accomplished due to the passivation effect. Consequently, enhanced champion efficiency of 13.88% with VOC of 1.141 V, JSC of 16.02 mA/cm2, and fill factor of 75.96% was delivered by the doped optimal device, compared with the efficiency of 11.97% of the reference device. Superior device stability was demonstrated for the optimal device both in ambient atmosphere and N2-filled glovebox, without encapsulation. Moreover, improved light stability was also confirmed for optimal device by prolonged operation time, under continuous illumination of simulated solar spectrum. In addition, high-temperature annealing or sintering of interlayer was eliminated by utilizing solution-processed poly[3-(4-carboxylbutyl)thiophene]-CH3NH2 (P3CT-CH3NH2) as the hole-transport layer. This work provides an alternative inverted architecture and an effective ion-doping strategy for efficient and stable all-inorganic perovskite solar cells (PSCs), which would help promote the development of PSC technology.
UR - https://www.scopus.com/pages/publications/85074288707
U2 - 10.1021/acs.chemmater.9b03277
DO - 10.1021/acs.chemmater.9b03277
M3 - 文章
AN - SCOPUS:85074288707
SN - 0897-4756
VL - 31
SP - 9032
EP - 9039
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 21
ER -