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Inverse magnetoresistance caused by nano-nitride-layer doping at the inner interfaces in the sandwich of Co/Cu/Co

  • Z. C. Zhao
  • , H. Wang*
  • , S. Q. Xiao
  • , D. Huang
  • , Y. Z. Gu
  • , Y. X. Xia
  • , Q. Y. Jin
  • , C. L. Zha
  • , X. S. Wu
  • *此作品的通讯作者
  • Shanghai Jiao Tong University
  • Massachusetts Institute of Technology
  • Fudan University
  • Nanjing University

科研成果: 期刊稿件文章同行评审

摘要

The influence of a nano-nitride-layer (NNL) doped at different interfaces in the structure of CuCoCuCoCu on magnetoresistance (MR) is investigated. As the NNL is doped at the inner interfaces of the core CoCuCo sandwich, an inverse MR is observed. This contrasts sharply with that doping at the two outer interfaces between the core sandwich (CoCuCo) and the buffer or/and the capping layers. The result arises from the negative spin asymmetry induced by the NNL doping under different interfacial circumstances. Moreover, the MR value increases in magnitude as temperature is decreased from room temperature to 4.2 K.

源语言英语
文章编号08R507
期刊Journal of Applied Physics
99
8
DOI
出版状态已出版 - 2006
已对外发布

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