@inproceedings{40ac991698334982880890489f28356a,
title = "InP HBT Small Signal Modeling based on Artificial Neural Network for Millimeter-wave Application",
abstract = "InP heterojunction bipolar transistor (HBT) small signal modeling technique based on artificial neural network(ANN) is proposed in this paper. Two ANN models with different outputs form are given and compared. In the frequency range of 2-110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate that the ANN model outputs with complex numbers form is more accurate than amplitude-phase form.",
keywords = "artificial neural network (ANN), heterojunction bipolar transistor (HBT), small signal model",
author = "Ao Zhang and Jianjun Gao",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2020 ; Conference date: 07-12-2020 Through 09-12-2020",
year = "2020",
month = dec,
day = "7",
doi = "10.1109/NEMO49486.2020.9343502",
language = "英语",
series = "2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2020",
address = "美国",
}