Infrared spectroscopic elliposimetry and crystallization of manganese cobalt nickelate films prepared by chemical deposition at low temperature

Manganese cobalt nickelate films (Mn_xCo_yNi_3-x-y) (MCN) were successfully prepared by chemical deposition method at the crystallization temperature of 600X1, which was greatly reduced from the traditional sintered temperature of 1050-1200°C. Our results show that the grain size of MCN films increases from 20 to 50 nm with the annealing temperature increasing from 600°C to 900°C. The real part ε₁ and imaginary part ε₂ of the dielectric constants and absorption coefficients of MCN thin films were determined by infrared spectroscopic ellipsometry (IRSE).