Infrared photoluminescence characterization of HgCdTe film

The Fourier transform and double modulation Fourier transform photoluminescence measurements were performed on HgCdTe films from liquid helium temperature to room temperature in the infrared band to 10 micrometers where the influence from room temperature background blackbody emission is very strong. From the band to band transition photoluminescence peak, which dominated in HgCdTe films with the small cadmium composition, the cadmium composition, crystal-quality-related band tail energy, and the active energy of the non-radiative Shockly-Read center, are obtained. The photoluminescence characterization method is also used to investigate the intentionally doped impurity behavior in HgCdTe. The amphoteric impurity behavior of As implanted in HgCdTe is discovered with the donor and acceptor energy level of 8.5 meV and 31.5 meV, respectively. The Ag impurity level of 70 meV in MBE HgCdTe is also found.