Infrared optical properties of Bi₂Ti₂O₇ thin films prepared by chemical solution decomposition technique

Bi₂Ti₂O₇ thin films were deposited on n-GaAs(100) by chemical solution decomposition technique. The infrared optical properties of the thin films were measured by infrared spectroscopic ellipsometry in the wavelength range of 2.8-12.5μm. Lorentz-Drude dispersion model was used to express the infrared dielectric constants of the thin films, and the refractive index, the extinction coefficient and the absorption coefficient of the thin films were calculated. The thickness of the thin films was determined as 139.2 nm by fitting.