摘要
The relationship between the magnetic field and the effective mass m* of the two-dimensional electron gas in the triangular quantum well at the heterointerface of modulation-doped Al0.15Ga0.85N/GaN heterostructures is investigated by means of temperature-dependent Shubnikov-de Haas measurements at low temperatures and high magnetic fields. The values of the m* have strong dependence on the magnetic field, which is thought to be attributed to conduction-band nonparabolicity of GaN.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2246-2249 |
| 页数 | 4 |
| 期刊 | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 卷 | 3 |
| DOI | |
| 出版状态 | 已出版 - 2006 |
| 已对外发布 | 是 |
| 活动 | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, 德国 期限: 28 8月 2005 → 2 9月 2005 |
指纹
探究 'Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver