摘要
Spin splitting of the two-dimensional electron gas (2DEG) in Al xGa1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements under the illumination at low temperatures. The beating patterns in the oscillatory magnetoresistance originating from zero-field spin splitting of the 2DEG are observed in this study. It is found that the spin splitting energy decreases after the illumination. It is also found that the illumination decreases the electric field at AlxGa1-xN/GaN heterointerfaces. Based on the experiments, it is suggested that the zero-field spin splitting of the 2DEG in AlxGa1-xN/GaN heterostructures mainly arises from the Rashba effect.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2339-2341 |
| 页数 | 3 |
| 期刊 | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 卷 | 5 |
| 期 | 6 |
| DOI | |
| 出版状态 | 已出版 - 2008 |
| 已对外发布 | 是 |
| 活动 | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, 美国 期限: 16 9月 2007 → 21 9月 2007 |
学术指纹
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