Influence of Si                         3                         N                         4                          and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

Y. Z. Gao; X. Y. Gong; W. Z. Fang; H. Y. Deng; G. J. Hu; M. Aoyama; T. Yamaguchi; N. Dai

doi:10.1016/j.apsusc.2004.10.123

Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

Y. Z. Gao^*
, X. Y. Gong
, W. Z. Fang
, H. Y. Deng
, G. J. Hu
, M. Aoyama
, T. Yamaguchi
, N. Dai

^*此作品的通讯作者

Tongji University
CAS - Shanghai Institute of Technical Physics
Shizuoka University

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si ₃ N ₄ top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si ₃ N ₄ and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.

源语言	英语
页（从-至）	297-300
页数	4
期刊	Applied Surface Science
卷	244
期	1-4
DOI	https://doi.org/10.1016/j.apsusc.2004.10.123
出版状态	已出版 - 15 5月 2005
已对外发布	是
活动	12th International Conference on Solid Films and Surfaces - Hammatsu, 日本期限: 21 6月 2004 → 25 6月 2004

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10.1016/j.apsusc.2004.10.123

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引用此

Gao, Y. Z., Gong, X. Y., Fang, W. Z., Deng, H. Y., Hu, G. J., Aoyama, M., Yamaguchi, T., & Dai, N. (2005). Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures Applied Surface Science, 244(1-4), 297-300. https://doi.org/10.1016/j.apsusc.2004.10.123

@article{b0ff2792bad04ac6abdfa3f6fed6cde1,

title = " Influence of Si 3 N 4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures ",

abstract = " The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si 3 N 4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si 3 N 4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.",

keywords = "Deposition, FTIR, InAsSb/InAsPSb, Si N, Transmittance, ZnS",

author = "Gao, \{Y. Z.\} and Gong, \{X. Y.\} and Fang, \{W. Z.\} and Deng, \{H. Y.\} and Hu, \{G. J.\} and M. Aoyama and T. Yamaguchi and N. Dai",

year = "2005",

month = may,

day = "15",

doi = "10.1016/j.apsusc.2004.10.123",

language = "英语",

volume = "244",

pages = "297--300",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

note = "12th International Conference on Solid Films and Surfaces ; Conference date: 21-06-2004 Through 25-06-2004",

}

Gao, YZ, Gong, XY, Fang, WZ, Deng, HY, Hu, GJ, Aoyama, M, Yamaguchi, T & Dai, N 2005, ' Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures ', Applied Surface Science, 卷 244, 号码 1-4, 页码 297-300. https://doi.org/10.1016/j.apsusc.2004.10.123

Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures . / Gao, Y. Z.; Gong, X. Y.; Fang, W. Z. 等.
在: Applied Surface Science, 卷 244, 号码 1-4, 15.05.2005, 页码 297-300.

科研成果: 期刊稿件 › 会议文章 › 同行评审

TY - JOUR

T1 - Influence of Si 3 N 4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

AU - Gao, Y. Z.

AU - Gong, X. Y.

AU - Fang, W. Z.

AU - Deng, H. Y.

AU - Hu, G. J.

AU - Aoyama, M.

AU - Yamaguchi, T.

AU - Dai, N.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si 3 N 4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si 3 N 4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.

AB - The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si 3 N 4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si 3 N 4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.

KW - Deposition

KW - FTIR

KW - InAsSb/InAsPSb

KW - Si N

KW - Transmittance

KW - ZnS

UR - https://www.scopus.com/pages/publications/15844418322

U2 - 10.1016/j.apsusc.2004.10.123

DO - 10.1016/j.apsusc.2004.10.123

M3 - 会议文章

AN - SCOPUS:15844418322

SN - 0169-4332

VL - 244

SP - 297

EP - 300

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - 12th International Conference on Solid Films and Surfaces

Y2 - 21 June 2004 through 25 June 2004

ER -

Gao YZ, Gong XY, Fang WZ, Deng HY, Hu GJ, Aoyama M 等. Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures Applied Surface Science. 2005 5月 15;244(1-4):297-300. doi: 10.1016/j.apsusc.2004.10.123

Influence of Si 3 N 4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

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Influence of Si ₃ N ₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructures