Influence of migration anisotropy on the growth mechanism

Jianguo Yu; Huibing Mao; Weiping Jing; Jiqing Wang

doi:10.1016/j.mssp.2009.10.003

Influence of migration anisotropy on the growth mechanism

Jianguo Yu
, Huibing Mao^*
, Weiping Jing
, Jiqing Wang

^*此作品的通讯作者

物理与电子科学学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The kinetics Monte Carlo (KMC) simulation and the rate equation method were used to study the influence of the anisotropic surface migration on the submonolayer growth mechanism. Simulations show that the influence of the migration anisotropy tends to saturate when the migration anisotropy exceeds 100. There is good agreement between the KMC simulation and the adjusted rate-equation. The researches show that it is significant to define a new parameter: effective diffusion rate. The effective diffusion rate is not only determined by the temperature and the hopping barrier, but is also by the anisotropy. The effective surface diffusion rate will decrease with the increase of the surface migration anisotropy.

源语言	英语
页（从-至）	189-192
页数	4
期刊	Materials Science in Semiconductor Processing
卷	12
期	4-5
DOI	https://doi.org/10.1016/j.mssp.2009.10.003
出版状态	已出版 - 8月 2009

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10.1016/j.mssp.2009.10.003

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@article{d8a8a39eea2e46deb32a1cb906c0a771,

title = "Influence of migration anisotropy on the growth mechanism",

abstract = "The kinetics Monte Carlo (KMC) simulation and the rate equation method were used to study the influence of the anisotropic surface migration on the submonolayer growth mechanism. Simulations show that the influence of the migration anisotropy tends to saturate when the migration anisotropy exceeds 100. There is good agreement between the KMC simulation and the adjusted rate-equation. The researches show that it is significant to define a new parameter: effective diffusion rate. The effective diffusion rate is not only determined by the temperature and the hopping barrier, but is also by the anisotropy. The effective surface diffusion rate will decrease with the increase of the surface migration anisotropy.",

keywords = "GaAs, Migration anisotropy, Monte Carlo simulation, Rate-equation",

author = "Jianguo Yu and Huibing Mao and Weiping Jing and Jiqing Wang",

year = "2009",

month = aug,

doi = "10.1016/j.mssp.2009.10.003",

language = "英语",

volume = "12",

pages = "189--192",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

number = "4-5",

}

TY - JOUR

T1 - Influence of migration anisotropy on the growth mechanism

AU - Yu, Jianguo

AU - Mao, Huibing

AU - Jing, Weiping

AU - Wang, Jiqing

PY - 2009/8

Y1 - 2009/8

N2 - The kinetics Monte Carlo (KMC) simulation and the rate equation method were used to study the influence of the anisotropic surface migration on the submonolayer growth mechanism. Simulations show that the influence of the migration anisotropy tends to saturate when the migration anisotropy exceeds 100. There is good agreement between the KMC simulation and the adjusted rate-equation. The researches show that it is significant to define a new parameter: effective diffusion rate. The effective diffusion rate is not only determined by the temperature and the hopping barrier, but is also by the anisotropy. The effective surface diffusion rate will decrease with the increase of the surface migration anisotropy.

AB - The kinetics Monte Carlo (KMC) simulation and the rate equation method were used to study the influence of the anisotropic surface migration on the submonolayer growth mechanism. Simulations show that the influence of the migration anisotropy tends to saturate when the migration anisotropy exceeds 100. There is good agreement between the KMC simulation and the adjusted rate-equation. The researches show that it is significant to define a new parameter: effective diffusion rate. The effective diffusion rate is not only determined by the temperature and the hopping barrier, but is also by the anisotropy. The effective surface diffusion rate will decrease with the increase of the surface migration anisotropy.

KW - GaAs

KW - Migration anisotropy

KW - Monte Carlo simulation

KW - Rate-equation

UR - https://www.scopus.com/pages/publications/77249087577

U2 - 10.1016/j.mssp.2009.10.003

DO - 10.1016/j.mssp.2009.10.003

M3 - 文章

AN - SCOPUS:77249087577

SN - 1369-8001

VL - 12

SP - 189

EP - 192

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4-5

ER -

Influence of migration anisotropy on the growth mechanism

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