Influence of annealing on crystal structure and properties of SrBi2Ta2O9 thin films prepared by pulse laser deposition

Ping Xiong Yang; Li Rong Zheng; Lian Wei Wang; Cheng Lu Lin

doi:10.1088/0256-307X/13/12/016

Influence of annealing on crystal structure and properties of SrBi₂Ta₂O₉ thin films prepared by pulse laser deposition

Ping Xiong Yang
, Li Rong Zheng
, Lian Wei Wang
, Cheng Lu Lin

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The perovskite-like SrBi₂ Ta₂O₉ (SET) thin films have been fabricated on Si/SiO₂/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; P_r and E_c were 8.4 μC/cm² and 57 kV/cm, respectively.

源语言	英语
页（从-至）	934-936
页数	3
期刊	Chinese Physics Letters
卷	13
期	12
DOI	https://doi.org/10.1088/0256-307X/13/12/016
出版状态	已出版 - 1996
已对外发布	是

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10.1088/0256-307X/13/12/016

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title = "Influence of annealing on crystal structure and properties of SrBi2Ta2O9 thin films prepared by pulse laser deposition",

abstract = "The perovskite-like SrBi2 Ta2O9 (SET) thin films have been fabricated on Si/SiO2/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively.",

author = "Yang, \{Ping Xiong\} and Zheng, \{Li Rong\} and Wang, \{Lian Wei\} and Lin, \{Cheng Lu\}",

year = "1996",

doi = "10.1088/0256-307X/13/12/016",

language = "英语",

volume = "13",

pages = "934--936",

journal = "Chinese Physics Letters",

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T1 - Influence of annealing on crystal structure and properties of SrBi2Ta2O9 thin films prepared by pulse laser deposition

AU - Yang, Ping Xiong

AU - Zheng, Li Rong

AU - Wang, Lian Wei

AU - Lin, Cheng Lu

PY - 1996

Y1 - 1996

N2 - The perovskite-like SrBi2 Ta2O9 (SET) thin films have been fabricated on Si/SiO2/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively.

AB - The perovskite-like SrBi2 Ta2O9 (SET) thin films have been fabricated on Si/SiO2/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively.

UR - https://www.scopus.com/pages/publications/0030335598

U2 - 10.1088/0256-307X/13/12/016

DO - 10.1088/0256-307X/13/12/016

M3 - 文章

AN - SCOPUS:0030335598

SN - 0256-307X

VL - 13

SP - 934

EP - 936

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 12

ER -

Influence of annealing on crystal structure and properties of SrBi2Ta2O9 thin films prepared by pulse laser deposition

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Influence of annealing on crystal structure and properties of SrBi₂Ta₂O₉ thin films prepared by pulse laser deposition