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Indium tin oxide films prepared by radio frequency magnetron sputtering under low vacuum level

  • X. D. Li
  • , H. B. Zhu
  • , J. B. Chu
  • , S. Y. Huang
  • , Z. Sun
  • , Y. W. Chen
  • , S. M. Huang
  • East China Normal University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

We have prepared indium tin oxide (ITO) thin films using radio frequency (RF) magnetron sputtering and under a quite low vacuum level of 2.3 × 10-3 Pa. The sputtering was done in an Ar and O2 gas mixture at a temperature of 200 °C. A ceramic ln2O3 : SnO2 target (10 wt% SnO2) was used. The microstructures of the films were investigated by a field emission scanning electron microscope (FESEM) and an X-ray diffractometer (XRD). X-ray photoelectron spectroscopy (XPS) was performed to characterize the compositions of the films. ITO films with a high transparency in the visible wavelength range (80% -95% ) were obtained. At a low working pressure ( 1 Pa), the more highly transparent and conductive films were produced at the lower O2 flow ratio. At a high working pressure (2 Pa), low quality, low transparency and amorphous films were obtained.

源语言英语
主期刊名AD'07 - Proceedings of Asia Display 2007
1844-1848
页数5
出版状态已出版 - 2007
已对外发布
活动Asia Display 2007, AD'07 - Shanghai, 中国
期限: 12 3月 200716 3月 2007

出版系列

姓名AD'07 - Proceedings of Asia Display 2007
2

会议

会议Asia Display 2007, AD'07
国家/地区中国
Shanghai
时期12/03/0716/03/07

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