Improvement of rectifying property in Pt/TiO_x/Pt by controlling oxidization of TiO_x layer

Rectifying Pt/TiO_x/Pt capacitors have been prepared by depositing a single TiO_x layer. An Ohmic contact is always found at TiO_x/Pt (bottom electrode, BE), and is attributed to the formation of a dead layer at the beginning of the deposition process. The current-voltage (I-V) characteristic is governed by the transport characteristic of TiO _x/Pt (top electrode, TE). The rectifying property is only found in Pt/TiO_x/Pt with the TiO_x layer when the O₂ working flow is high during the deposition process. Besides a high O₂ flow, a high working pressure is also required. Moreover, postannealing treatment can improve the rectifying property of the capacitors. Upon the optimization of the postannealing treatment process, the rectifying ratio at ±1:0 V increases from 20 to 4 × 10³.