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Improvement of GaN-based light-emitting diodes using surface-textured Indium-Tin-Oxide transparent ohmic contacts

  • Y. Yao*
  • , C. C. Jin
  • , Z. Dong
  • , Z. Sun
  • , S. M. Huang
  • *此作品的通讯作者
  • East China Normal University
  • Delight Optoelectronics Co., Ltd.

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

To improve the extraction efficiency of GaN-based light-emitting diodes (LEDs), surface-textured Indium-Tin-Oxide (ITO) transparent ohmic contact layers have been fabricated by utilizing inductively coupled plasma etching technology and natural lithography with polystyrene spheres as the etching mask without destroying the P-GaN. The morphologies of the textured ITO surface were examined and characterized by a scanning electron microscope. The optimized and detailed parameters of the texturing process are reported. The fabricated LEDs with the surface-textured ITO ohmic contacts produce a luminance intensity that exceeds that of the traditional planar-surface LEDs by around 70% at 20 mA dc current.

源语言英语
主期刊名AD'07 - Proceedings of Asia Display 2007
1570-1573
页数4
出版状态已出版 - 2007
已对外发布
活动Asia Display 2007, AD'07 - Shanghai, 中国
期限: 12 3月 200716 3月 2007

出版系列

姓名AD'07 - Proceedings of Asia Display 2007
2

会议

会议Asia Display 2007, AD'07
国家/地区中国
Shanghai
时期12/03/0716/03/07

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