Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

We present a self-consistent analysis of the Curie temperature (T_c) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrödinger and Poisson equations for different Mn δ-doping positions (d_s) and uncompensated Mn atom concentration (N_Mn). Under low dopant concentration (N_Mn < 4 × 10¹⁵ / m²), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. T_c of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.