Improved HEMT device noise equivalent circuit model

Jianjun Gao; Baoxin Gao; Chunguang Liang

Improved HEMT device noise equivalent circuit model

Jianjun Gao^*
, Baoxin Gao
, Chunguang Liang

^*此作品的通讯作者

Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

源语言	英语
页（从-至）	5-8
页数	4
期刊	Qinghua Daxue Xuebao/Journal of Tsinghua University
卷	41
期	7
出版状态	已出版 - 7月 2001
已对外发布	是

其它文件与链接

链接到 Scopus 的出版物

引用此

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title = "Improved HEMT device noise equivalent circuit model",

abstract = "This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.",

keywords = "Circuit model, Noise parameters, Simulation",

author = "Jianjun Gao and Baoxin Gao and Chunguang Liang",

year = "2001",

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language = "英语",

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TY - JOUR

T1 - Improved HEMT device noise equivalent circuit model

AU - Gao, Jianjun

AU - Gao, Baoxin

AU - Liang, Chunguang

PY - 2001/7

Y1 - 2001/7

N2 - This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

AB - This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

KW - Circuit model

KW - Noise parameters

KW - Simulation

UR - https://www.scopus.com/pages/publications/0035401497

M3 - 文章

AN - SCOPUS:0035401497

SN - 1000-0054

VL - 41

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EP - 8

JO - Qinghua Daxue Xuebao/Journal of Tsinghua University

JF - Qinghua Daxue Xuebao/Journal of Tsinghua University

IS - 7

ER -

Improved HEMT device noise equivalent circuit model

摘要

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