Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

Gaofang Li; Renjie Huang; Jingguo Huang; Wenjie Zhang; Haoyang Cui; Nenghong Xia; Zhiming Huang; Junhao Chu; Guohong Ma

doi:10.35848/1882-0786/ac06ad

Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

Gaofang Li
, Renjie Huang
, Jingguo Huang
, Wenjie Zhang
, Haoyang Cui
, Nenghong Xia
, Zhiming Huang^*
, Junhao Chu
, Guohong Ma^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

源语言	英语
文章编号	072004
期刊	Applied Physics Express
卷	14
期	7
DOI	https://doi.org/10.35848/1882-0786/ac06ad
出版状态	已出版 - 7月 2021
已对外发布	是

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title = "Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification",

abstract = "The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass\% GaSe is 28.3\% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass\% GaSe is increased compared with that of intrinsic and S-doped 7 mass\% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.",

author = "Gaofang Li and Renjie Huang and Jingguo Huang and Wenjie Zhang and Haoyang Cui and Nenghong Xia and Zhiming Huang and Junhao Chu and Guohong Ma",

note = "Publisher Copyright: {\textcopyright} 2021 The Japan Society of Applied Physics.",

year = "2021",

month = jul,

doi = "10.35848/1882-0786/ac06ad",

language = "英语",

volume = "14",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

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TY - JOUR

T1 - Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

AU - Li, Gaofang

AU - Huang, Renjie

AU - Huang, Jingguo

AU - Zhang, Wenjie

AU - Cui, Haoyang

AU - Xia, Nenghong

AU - Huang, Zhiming

AU - Chu, Junhao

AU - Ma, Guohong

PY - 2021/7

Y1 - 2021/7

N2 - The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

AB - The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

UR - https://www.scopus.com/pages/publications/85109954376

U2 - 10.35848/1882-0786/ac06ad

DO - 10.35848/1882-0786/ac06ad

M3 - 文章

AN - SCOPUS:85109954376

SN - 1882-0778

VL - 14

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 072004

ER -

Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

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