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Impact of Ambient Temperature on Electrothermal Characteristics of Gate-All-Around Nanosheet FETs

  • East China Normal University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, the impact of ambient temperature on self-heating effects (SHEs) of 5nm gate-all-around nanosheet FETs (NS-GAAFETs) is investigated. The electrical characteristics of DC and AC, as well as the thermal characteristics of steady and transient state, are analyzed. Through numerical evaluations, it is shown that the ambient temperature strongly affects the electrothermal characteristics of NS-GAAFETs. With the ambient temperature increasing, the performances of NS-GAAFETs significantly deteriorate, where the on-off ratio ION/IOFF and sub-threshold swing SS decrease by 90.5% and 19.5% respectively.

源语言英语
主期刊名International Conference Optoelectronic Information and Optical Engineering, OIOE 2024
编辑Yang Yue, Lu Leng
出版商SPIE
ISBN(电子版)9781510688193
DOI
出版状态已出版 - 2025
活动2024 International Conference Optoelectronic Information and Optical Engineering, OIOE 2024 - Wuhan, 中国
期限: 18 10月 202420 10月 2024

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
13513
ISSN(印刷版)0277-786X
ISSN(电子版)1996-756X

会议

会议2024 International Conference Optoelectronic Information and Optical Engineering, OIOE 2024
国家/地区中国
Wuhan
时期18/10/2420/10/24

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