Hydrothermal preparation of BaTiO3 thin film on silicon

W. Ping Xu; Lianwei Wang; Huoping Xin; Lirong Zheng; Chenglu Lin

Hydrothermal preparation of BaTiO₃ thin film on silicon

W. Ping Xu^*
, Lianwei Wang
, Huoping Xin
, Lirong Zheng
, Chenglu Lin

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 会议稿件 › 论文 › 同行评审

1 引用（Scopus）

摘要

In situ crystallized BaTiO₃ thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction(XRD) characterization and spreading resistance probes(SRP) measurements showed that a multi-layer structure of cubic BaTiO₃/amorphous BaTiO_3-x/Ti/Si was formed, while it became tetragonal BaTiO₃/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance.

源语言	英语
页	278-280
页数	3
出版状态	已出版 - 1995
已对外发布	是
活动	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China 期限: 24 10月 1995 → 28 10月 1995

会议

会议	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
市	Beijing, China
时期	24/10/95 → 28/10/95

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引用此

@conference{49726f9d8d0f4b23b767643b8ecc3c31,

title = "Hydrothermal preparation of BaTiO3 thin film on silicon",

abstract = "In situ crystallized BaTiO3 thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction(XRD) characterization and spreading resistance probes(SRP) measurements showed that a multi-layer structure of cubic BaTiO3/amorphous BaTiO3-x/Ti/Si was formed, while it became tetragonal BaTiO3/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance.",

author = "Xu, \{W. Ping\} and Lianwei Wang and Huoping Xin and Lirong Zheng and Chenglu Lin",

year = "1995",

language = "英语",

pages = "278--280",

note = "Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 24-10-1995 Through 28-10-1995",

}

TY - CONF

T1 - Hydrothermal preparation of BaTiO3 thin film on silicon

AU - Xu, W. Ping

AU - Wang, Lianwei

AU - Xin, Huoping

AU - Zheng, Lirong

AU - Lin, Chenglu

PY - 1995

Y1 - 1995

N2 - In situ crystallized BaTiO3 thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction(XRD) characterization and spreading resistance probes(SRP) measurements showed that a multi-layer structure of cubic BaTiO3/amorphous BaTiO3-x/Ti/Si was formed, while it became tetragonal BaTiO3/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance.

AB - In situ crystallized BaTiO3 thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction(XRD) characterization and spreading resistance probes(SRP) measurements showed that a multi-layer structure of cubic BaTiO3/amorphous BaTiO3-x/Ti/Si was formed, while it became tetragonal BaTiO3/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance.

UR - https://www.scopus.com/pages/publications/0029464353

M3 - 论文

AN - SCOPUS:0029464353

SP - 278

EP - 280

T2 - Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 24 October 1995 through 28 October 1995

ER -

Hydrothermal preparation of BaTiO3 thin film on silicon

摘要

会议

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Hydrothermal preparation of BaTiO₃ thin film on silicon