Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures

Lianfei Yao; Feifei Lu; Luoyuan Ruan; Huiyong Deng; Xue Lou

doi:10.1021/acs.jpclett.4c02784

Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures

Lianfei Yao
, Feifei Lu
, Luoyuan Ruan
, Huiyong Deng^*
, Xue Lou^*

^*此作品的通讯作者

Zhejiang Lab
East China Normal University
Zhejiang University
Westlake University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe₂, with an energy threshold of 2.22 eV (∼2.02E_g) and a MEG conversion efficiency of 90%. We discuss the potential origins of efficient MEG in MoTe₂/WSe₂ type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe₂ has significant potential for efficient light harvesting and hot-carrier devices.

源语言	英语
页（从-至）	1887-1893
页数	7
期刊	Journal of Physical Chemistry Letters
卷	16
期	8
DOI	https://doi.org/10.1021/acs.jpclett.4c02784
出版状态	已出版 - 27 2月 2025
已对外发布	是

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title = "Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures",

abstract = "Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe2, with an energy threshold of 2.22 eV (∼2.02Eg) and a MEG conversion efficiency of 90\%. We discuss the potential origins of efficient MEG in MoTe2/WSe2 type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe2 has significant potential for efficient light harvesting and hot-carrier devices.",

author = "Lianfei Yao and Feifei Lu and Luoyuan Ruan and Huiyong Deng and Xue Lou",

note = "Publisher Copyright: {\textcopyright} 2025 American Chemical Society.",

year = "2025",

month = feb,

day = "27",

doi = "10.1021/acs.jpclett.4c02784",

language = "英语",

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TY - JOUR

T1 - Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures

AU - Yao, Lianfei

AU - Lu, Feifei

AU - Ruan, Luoyuan

AU - Deng, Huiyong

AU - Lou, Xue

PY - 2025/2/27

Y1 - 2025/2/27

N2 - Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe2, with an energy threshold of 2.22 eV (∼2.02Eg) and a MEG conversion efficiency of 90%. We discuss the potential origins of efficient MEG in MoTe2/WSe2 type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe2 has significant potential for efficient light harvesting and hot-carrier devices.

AB - Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe2, with an energy threshold of 2.22 eV (∼2.02Eg) and a MEG conversion efficiency of 90%. We discuss the potential origins of efficient MEG in MoTe2/WSe2 type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe2 has significant potential for efficient light harvesting and hot-carrier devices.

UR - https://www.scopus.com/pages/publications/85217930999

U2 - 10.1021/acs.jpclett.4c02784

DO - 10.1021/acs.jpclett.4c02784

M3 - 文章

C2 - 39959985

AN - SCOPUS:85217930999

SN - 1948-7185

VL - 16

SP - 1887

EP - 1893

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 8

ER -

Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures

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