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Highly Suppressed Thermal Conductivity in Diamond-like Cu2SnS3by Dense Dislocation

  • Chao Li
  • , Haili Song
  • , Yan Cheng
  • , Ruijuan Qi
  • , Rong Huang*
  • , Chengqiang Cui*
  • , Yifeng Wang
  • , Yu Zhang*
  • , Lei Miao*
  • *此作品的通讯作者
  • Guangdong University of Technology
  • Ji Hua Laboratory
  • Sun Yat-Sen University
  • East China Normal University
  • Nanjing Tech University
  • Guilin University of Electronic Technology
  • Shibaura Institute of Technology

科研成果: 期刊稿件文章同行评审

摘要

Cu2SnS3 is a promising low-cost and eco-friendly thermoelectric material. However, its rigid diamond crystal structure leads to a high thermal conductivity and hence its overall poor thermoelectric properties. Here we show Ni doping at the Sn site can introduce a dense dislocation of density of ∼4.83 × 109 cm-2 to Cu2SnS3. The abundant dislocations generate a large strain within the matrix, which effectively scatters heat-carrying phonons. The resultant lowest κlatt reaches ∼0.41 W m-1 K-1 at 723 K, approaching the theoretical limit (0.30 W m-1 K-1). The regulation strategy on dislocations is expected to reduce the thermal conductivity and improve the functionalities of other diamond-like materials.

源语言英语
页(从-至)8728-8733
页数6
期刊ACS Applied Energy Materials
4
9
DOI
出版状态已出版 - 27 9月 2021

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