@inproceedings{8bbb17583da84dc39b31c91fab9b89d6,
title = "Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition",
abstract = "Highly (222)-oriented 90\%Pb(Zn1/3Nb2/3)O 3-10\%PbTiO3(abbreviated PZN-PT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO2/Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined by X-ray diffraction, was formed in the PZN-PT thin films when the temperature of substrates is 550 °C. FE-SEM investigation shows that the surface appearance and the cross section of the films are smooth and crack-free with some dispersive spherical protrusions. The dielectric constant and loss of the thin films were measured using an impedance analyzer (HP4194A). The dielectric constant (εr) and the dissipation factor (tanδ) at 1 kHz are 205 and 0.03, respectively.",
keywords = "Dielectric loss, PZN-PT thin films, Pulsed laser deposition, Pyrochlore",
author = "Han, \{H. L.\} and Liu, \{A. Y.\} and Wei, \{L. L.\} and P. Wang and Lin, \{F. T.\} and Shi, \{W. Z.\} and Jing, \{C. B.\}",
year = "2013",
doi = "10.1117/12.2053925",
language = "英语",
isbn = "9780819499974",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Eighth International Conference on Thin Film Physics and Applications",
note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",
}