High-temperature growth of silica sheathed Bi2S3 semiconductor nanowires

Hao Xu Zhang; Jian Ping Ge; Ya Dong Li

doi:10.1002/cvde.200406334

High-temperature growth of silica sheathed Bi₂S₃ semiconductor nanowires

Hao Xu Zhang^*
, Jian Ping Ge
, Ya Dong Li

^*此作品的通讯作者

National Center for Nanoscience and Technology
Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

Silica-sheathed Bi₂S₃ nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ₃ and sulfur precursors. The mechanisms concerning the stable chemical species (Bi₂S₃, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi₂S₃ nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi₂S₃.

源语言	英语
页（从-至）	147-152
页数	6
期刊	Chemical Vapor Deposition
卷	11
期	3
DOI	https://doi.org/10.1002/cvde.200406334
出版状态	已出版 - 3月 2005
已对外发布	是

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@article{20103f9f568b4be39e192f0ab6a1fb7e,

title = "High-temperature growth of silica sheathed Bi2S3 semiconductor nanowires",

abstract = "Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.",

keywords = "APCVD, Bismuth sulfide nanowire, Silica sheath",

author = "Zhang, \{Hao Xu\} and Ge, \{Jian Ping\} and Li, \{Ya Dong\}",

year = "2005",

month = mar,

doi = "10.1002/cvde.200406334",

language = "英语",

volume = "11",

pages = "147--152",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - High-temperature growth of silica sheathed Bi2S3 semiconductor nanowires

AU - Zhang, Hao Xu

AU - Ge, Jian Ping

AU - Li, Ya Dong

PY - 2005/3

Y1 - 2005/3

N2 - Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.

AB - Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.

KW - APCVD

KW - Bismuth sulfide nanowire

KW - Silica sheath

UR - https://www.scopus.com/pages/publications/21244477525

U2 - 10.1002/cvde.200406334

DO - 10.1002/cvde.200406334

M3 - 文章

AN - SCOPUS:21244477525

SN - 0948-1907

VL - 11

SP - 147

EP - 152

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 3

ER -

High-temperature growth of silica sheathed Bi2S3 semiconductor nanowires

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High-temperature growth of silica sheathed Bi₂S₃ semiconductor nanowires