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High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

  • Qianqian Meng
  • , Hong Wang*
  • , Chongyang Liu
  • , Xin Guo
  • , Jianjun Gao
  • , Kian Siong Ang
  • *此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.

源语言英语
文章编号7736106
页(从-至)40-44
页数5
期刊IEEE Journal of the Electron Devices Society
5
1
DOI
出版状态已出版 - 1月 2017

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