摘要
In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 7736106 |
| 页(从-至) | 40-44 |
| 页数 | 5 |
| 期刊 | IEEE Journal of the Electron Devices Society |
| 卷 | 5 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1月 2017 |
指纹
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