TY - JOUR
T1 - High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films
AU - Yin, Wenlei
AU - Yang, Jiayan
AU - Zhao, Keyang
AU - Cui, Anyang
AU - Zhou, Jiaoyan
AU - Tian, Wei
AU - Li, Wenwu
AU - Hu, Zhigao
AU - Chu, Junhao
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/3/11
Y1 - 2020/3/11
N2 - Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1-xNixO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10-7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.
AB - Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1-xNixO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10-7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.
KW - Ni doping
KW - copper oxide
KW - external quantum efficiency
KW - photodetector
KW - responsivity
UR - https://www.scopus.com/pages/publications/85081946020
U2 - 10.1021/acsami.9b18663
DO - 10.1021/acsami.9b18663
M3 - 文章
C2 - 32067447
AN - SCOPUS:85081946020
SN - 1944-8244
VL - 12
SP - 11797
EP - 11805
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 10
ER -