High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang; T. Uemura; K. Miyake; S. Onish; T. Kato; M. Katayama; M. Kang; K. Takimiya; M. Ikeda; H. Kuwabara; M. Hamada; J. Takeya

doi:10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang^*
, T. Uemura
, K. Miyake
, S. Onish
, T. Kato
, M. Katayama
, M. Kang
, K. Takimiya
, M. Ikeda
, H. Kuwabara
, M. Hamada
, J. Takeya

^*此作品的通讯作者

The University of Osaka
DENSO Corporation
Hiroshima University
Nippon Kayaku Co., Ltd.

科研成果: 期刊稿件 › 文章 › 同行评审

41 引用（Scopus）

摘要

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al₂ O ₃ formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm²/ Vs in the crystalline C₁₀-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

源语言	英语
文章编号	223304
期刊	Applied Physics Letters
卷	101
期	22
DOI	https://doi.org/10.1063/1.4769436
出版状态	已出版 - 26 11月 2012
已对外发布	是

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10.1063/1.4769436

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引用此

Ou-Yang, W., Uemura, T., Miyake, K., Onish, S., Kato, T., Katayama, M., Kang, M., Takimiya, K., Ikeda, M., Kuwabara, H., Hamada, M., & Takeya, J. (2012). High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters, 101(22), 文章 223304. https://doi.org/10.1063/1.4769436

@article{fc1667c2ee0b4cddac3cc2cba4ff2fc1,

title = "High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene",

abstract = "High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.",

author = "W. Ou-Yang and T. Uemura and K. Miyake and S. Onish and T. Kato and M. Katayama and M. Kang and K. Takimiya and M. Ikeda and H. Kuwabara and M. Hamada and J. Takeya",

year = "2012",

month = nov,

day = "26",

doi = "10.1063/1.4769436",

language = "英语",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

Ou-Yang, W, Uemura, T, Miyake, K, Onish, S, Kato, T, Katayama, M, Kang, M, Takimiya, K, Ikeda, M, Kuwabara, H, Hamada, M & Takeya, J 2012, 'High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene', Applied Physics Letters, 卷 101, 号码 22, 223304. https://doi.org/10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. / Ou-Yang, W.; Uemura, T.; Miyake, K. 等.
在: Applied Physics Letters, 卷 101, 号码 22, 223304, 26.11.2012.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - High-performance organic transistors with high-k dielectrics

T2 - A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

AU - Ou-Yang, W.

AU - Uemura, T.

AU - Miyake, K.

AU - Onish, S.

AU - Kato, T.

AU - Katayama, M.

AU - Kang, M.

AU - Takimiya, K.

AU - Ikeda, M.

AU - Kuwabara, H.

AU - Hamada, M.

AU - Takeya, J.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

AB - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

UR - https://www.scopus.com/pages/publications/84870573523

U2 - 10.1063/1.4769436

DO - 10.1063/1.4769436

M3 - 文章

AN - SCOPUS:84870573523

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223304

ER -

Ou-Yang W, Uemura T, Miyake K, Onish S, Kato T, Katayama M 等. High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters. 2012 11月 26;101(22):223304. doi: 10.1063/1.4769436