High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

Leilei Xu; Xiaomin Li; Qiuxiang Zhu; Xiaoke Xu; Meng Qin

doi:10.1016/j.matlet.2017.01.125

High-performance BiFe_0.95Mn_0.05O₃ ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO₂ bi-layer buffer

Leilei Xu
, Xiaomin Li^*
, Qiuxiang Zhu
, Xiaoke Xu
, Meng Qin

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The highly (1 1 1)-oriented BiFe_0.95Mn_0.05O₃ (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La_0.7Sr_0.3MnO₃ (LSMO)/TiO₂ bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO₂ bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm² and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

源语言	英语
页（从-至）	240-243
页数	4
期刊	Materials Letters
卷	193
DOI	https://doi.org/10.1016/j.matlet.2017.01.125
出版状态	已出版 - 15 4月 2017
已对外发布	是

访问文件

10.1016/j.matlet.2017.01.125

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{a5c905db910141628b1faec183f6763d,

title = "High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer",

abstract = "The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4\% to 1.4\%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92\%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.",

keywords = "Bi-layer buffer, Bismuth ferrite, Epitaxial growth, Ferroelectrics, GaN integration",

author = "Leilei Xu and Xiaomin Li and Qiuxiang Zhu and Xiaoke Xu and Meng Qin",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = apr,

day = "15",

doi = "10.1016/j.matlet.2017.01.125",

language = "英语",

volume = "193",

pages = "240--243",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

AU - Xu, Leilei

AU - Li, Xiaomin

AU - Zhu, Qiuxiang

AU - Xu, Xiaoke

AU - Qin, Meng

PY - 2017/4/15

Y1 - 2017/4/15

N2 - The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

AB - The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

KW - Bi-layer buffer

KW - Bismuth ferrite

KW - Epitaxial growth

KW - Ferroelectrics

KW - GaN integration

UR - https://www.scopus.com/pages/publications/85012111055

U2 - 10.1016/j.matlet.2017.01.125

DO - 10.1016/j.matlet.2017.01.125

M3 - 文章

AN - SCOPUS:85012111055

SN - 0167-577X

VL - 193

SP - 240

EP - 243

JO - Materials Letters

JF - Materials Letters

ER -

High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

摘要

访问文件

其它文件与链接

指纹

引用此

High-performance BiFe_0.95Mn_0.05O₃ ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO₂ bi-layer buffer