TY - JOUR
T1 - Growth temperature effect on field emission properties of printable carbon nanotubes cathode
AU - Wang, Lili
AU - Sun, Zhuo
AU - Chen, Ting
AU - Que, Wenxiu
PY - 2006/5
Y1 - 2006/5
N2 - The carbon nanotubes (CNTs) were synthesized by low pressure chemical vapor deposition (CVD) in the temperature range of 500-750 °C. The dependence of field emission properties of screen-printed cathode on the CNTs growth temperatures was studied. The scanning electron microscope (SEM) images and Raman spectra showed that with the temperature increasing from 500 °C to 750 °C, the average diameter of most CNTs decreased, and the crystallinity of the nanotubes increases as shown by the narrower and more intense G peak in the Raman spectra. It is found that the higher growth temperature, the better field emission properties of the screen-printed nanotubes cathodes, i.e. lower turn-on emission field, higher emission current and more uniform emission.
AB - The carbon nanotubes (CNTs) were synthesized by low pressure chemical vapor deposition (CVD) in the temperature range of 500-750 °C. The dependence of field emission properties of screen-printed cathode on the CNTs growth temperatures was studied. The scanning electron microscope (SEM) images and Raman spectra showed that with the temperature increasing from 500 °C to 750 °C, the average diameter of most CNTs decreased, and the crystallinity of the nanotubes increases as shown by the narrower and more intense G peak in the Raman spectra. It is found that the higher growth temperature, the better field emission properties of the screen-printed nanotubes cathodes, i.e. lower turn-on emission field, higher emission current and more uniform emission.
KW - Carbon nanotubes (CNTs)
KW - Field emission display (FED)
KW - Growth temperature
KW - Screen printing
UR - https://www.scopus.com/pages/publications/33744922619
U2 - 10.1016/j.sse.2006.04.004
DO - 10.1016/j.sse.2006.04.004
M3 - 文章
AN - SCOPUS:33744922619
SN - 0038-1101
VL - 50
SP - 800
EP - 804
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 5
ER -