@inproceedings{73821fcf585147c8b733f9f418bff8f8,
title = "Growth, structure, and optical properties of GaSb quantum dot by LPE technique",
abstract = "In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ∼l.leV is well separated from wetting layer (WL) at ∼ 1.34 eV.",
keywords = "GaSb QDs, PL spectrum and liquid phase epitaxy, X-TEM",
author = "F. Qiu and Y. Zhang and Lv, \{Y. F.\} and Guo, \{J. H.\} and Hu, \{G. J.\} and S. Sun and Deng, \{H. Y.\} and Hu, \{S. H.\} and N. Dai and Zhuang, \{Q. D.\} and M. Yin and A. Krier and Z. Zhao",
year = "2013",
doi = "10.1109/INEC.2013.6465998",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "203--204",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}