Growth of Mn5Ge3 ultrathin film on Ge(111)

Li Jun Chen; De Yong Wang; Qing Feng Zhan; Wei He; Qing An Li; Zhao Hua Cheng

doi:10.1088/1674-1056/17/10/057

Growth of Mn₅Ge₃ ultrathin film on Ge(111)

Li Jun Chen^*
, De Yong Wang
, Qing Feng Zhan
, Wei He
, Qing An Li
, Zhao Hua Cheng

^*此作品的通讯作者

CAS - Institute of Physics

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The growth of Mn₅Ge₃ ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a (√3 × √3) R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T²-dependent behaviour is observed to remain up to 220 K.

源语言	英语
页（从-至）	3902-3906
页数	5
期刊	Chinese Physics B
卷	17
期	10
DOI	https://doi.org/10.1088/1674-1056/17/10/057
出版状态	已出版 - 1 10月 2008
已对外发布	是

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10.1088/1674-1056/17/10/057

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title = "Growth of Mn5Ge3 ultrathin film on Ge(111)",

abstract = "The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a (√3 × √3) R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T2-dependent behaviour is observed to remain up to 220 K.",

keywords = "Magnetic semiconductors, MnGe, Scanning tunnelling microscopy, Solid phase epitaxy",

author = "Chen, \{Li Jun\} and Wang, \{De Yong\} and Zhan, \{Qing Feng\} and Wei He and Li, \{Qing An\} and Cheng, \{Zhao Hua\}",

year = "2008",

month = oct,

day = "1",

doi = "10.1088/1674-1056/17/10/057",

language = "英语",

volume = "17",

pages = "3902--3906",

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TY - JOUR

T1 - Growth of Mn5Ge3 ultrathin film on Ge(111)

AU - Chen, Li Jun

AU - Wang, De Yong

AU - Zhan, Qing Feng

AU - He, Wei

AU - Li, Qing An

AU - Cheng, Zhao Hua

PY - 2008/10/1

Y1 - 2008/10/1

N2 - The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a (√3 × √3) R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T2-dependent behaviour is observed to remain up to 220 K.

AB - The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a (√3 × √3) R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T2-dependent behaviour is observed to remain up to 220 K.

KW - Magnetic semiconductors

KW - MnGe

KW - Scanning tunnelling microscopy

KW - Solid phase epitaxy

UR - https://www.scopus.com/pages/publications/56349084221

U2 - 10.1088/1674-1056/17/10/057

DO - 10.1088/1674-1056/17/10/057

M3 - 文章

AN - SCOPUS:56349084221

SN - 1674-1056

VL - 17

SP - 3902

EP - 3906

JO - Chinese Physics B

JF - Chinese Physics B

IS - 10

ER -

Growth of Mn5Ge3 ultrathin film on Ge(111)

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Growth of Mn₅Ge₃ ultrathin film on Ge(111)