Growth of carbon nanotube bundles on microscratched surfaces

Lei Huang; S. P. Lau; Z. Sun; Kenneth B.K. Teo; B. K. Tay

doi:10.1142/S0219581X0500353X

Growth of carbon nanotube bundles on microscratched surfaces

Lei Huang
, S. P. Lau^*
, Z. Sun
, Kenneth B.K. Teo
, B. K. Tay

^*此作品的通讯作者

Nanyang Technological University
University of Cambridge

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

源语言	英语
页（从-至）	419-422
页数	4
期刊	International Journal of Nanoscience
卷	4
期	4
DOI	https://doi.org/10.1142/S0219581X0500353X
出版状态	已出版 - 8月 2005
已对外发布	是

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abstract = "In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.",

keywords = "Aligned carbon nanotubes, Carbon nanotubes, Chemical vapor deposition, Reactive ion etching",

author = "Lei Huang and Lau, \{S. P.\} and Z. Sun and Teo, \{Kenneth B.K.\} and Tay, \{B. K.\}",

year = "2005",

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AU - Huang, Lei

AU - Lau, S. P.

AU - Sun, Z.

AU - Teo, Kenneth B.K.

AU - Tay, B. K.

PY - 2005/8

Y1 - 2005/8

N2 - In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

AB - In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

KW - Aligned carbon nanotubes

KW - Carbon nanotubes

KW - Chemical vapor deposition

KW - Reactive ion etching

UR - https://www.scopus.com/pages/publications/28844488407

U2 - 10.1142/S0219581X0500353X

DO - 10.1142/S0219581X0500353X

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SN - 0219-581X

VL - 4

SP - 419

EP - 422

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 4

ER -

Growth of carbon nanotube bundles on microscratched surfaces

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