Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

Feng Qiu; Yingfei Lv; Jianhua Guo; Yan Sun; Huiyong Deng; Shuhong Hu; Ning Dai

doi:10.3788/COL201210.S21603

Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

Feng Qiu
, Yingfei Lv
, Jianhua Guo
, Yan Sun
, Huiyong Deng
, Shuhong Hu^*
, Ning Dai

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

源语言	英语
文章编号	S21603
期刊	Chinese Optics Letters
卷	10
期	SUPPL.2
DOI	https://doi.org/10.3788/COL201210.S21603
出版状态	已出版 - 12月 2012
已对外发布	是

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abstract = "The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.",

author = "Feng Qiu and Yingfei Lv and Jianhua Guo and Yan Sun and Huiyong Deng and Shuhong Hu and Ning Dai",

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T1 - Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

AU - Qiu, Feng

AU - Lv, Yingfei

AU - Guo, Jianhua

AU - Sun, Yan

AU - Deng, Huiyong

AU - Hu, Shuhong

AU - Dai, Ning

PY - 2012/12

Y1 - 2012/12

N2 - The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

AB - The self-assembled type-II GaSb quantum dots (QDs) are successfully grown on semi-insulting GaAs (100) matrix by liquid phase epitaxy technique. The topography of QDs with high growth temperature is characterized by atomic force microscopy (AFM). The cap layer, which is needed for the device fabrication, is obtained for only some tens of nanometers. The non-resonant Raman spectra are applied to investigate the GaSb-like optical phonons localized in the QDs and to confirm convincingly the existence of GaSb QDs.

UR - https://www.scopus.com/pages/publications/84874497066

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DO - 10.3788/COL201210.S21603

M3 - 文章

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SN - 1671-7694

VL - 10

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - SUPPL.2

M1 - S21603

ER -

Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy

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