摘要
SrBi2Nb2O9 (SBN) ferroelectric thin films were fabricated using plasma assisted laser deposition (PLD). The band-gap energy was determined to be 3.60 eV. A photoluminescence peak at 0.78 μm was observed whose intensity decreased with decreasing temperature, when excited with subband-gap energy. A mechanism for the observed photoluminescence, a Nb4+ -O- exciton in the NbO6 octahedron was suggested.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 9226-9230 |
| 页数 | 5 |
| 期刊 | Journal of Applied Physics |
| 卷 | 93 |
| 期 | 11 |
| DOI | |
| 出版状态 | 已出版 - 1 6月 2003 |
| 已对外发布 | 是 |
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