Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

Ferroelectric strontium bismuth tantalite (SBT) thin films were fabricated on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition combined with an annealing process. The crystallization and ferroelectric properties were clearly dependent on the annealing conditions. SBT thin films with good crystallization and ferroelectric properties were obtained after annealing at 700°C for 90 min. The films showed high (115) and (008) diffraction peaks. Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 μm C cm^-2 and 57 kV cm^-1, respectively. No fatigue was observed up to 10¹⁰ switching cycles. The dc leakage current was about 4 × 10^-8 A cm^-2 and the dc breakdown field was 250 kV cm^-1.