@inproceedings{781689dc35f3490c915b29db9e80fe0d,
title = "Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method",
abstract = "Sb2Te3 film was deposited on glass substrates which were heated at 180 °C by pulsed laser deposition (PLD) process using Sb 2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180 °C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.",
keywords = "Pulsed laser method, SbTe, Structure and crystallization",
author = "Tantan Liu and Hongmei Deng and Pingxiong Yang and Jun Zhang and Huiyi Cao and Jun He and Junhao Chu",
year = "2013",
doi = "10.1117/12.2053508",
language = "英语",
isbn = "9780819499974",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Eighth International Conference on Thin Film Physics and Applications",
note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",
}