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Growth and characterization of CdSe:Mn quantum dots

  • X. Tang
  • , B. Urbaszek
  • , T. C.M. Graham
  • , R. J. Warburton
  • , K. A. Prior*
  • , B. C. Cavenett
  • *此作品的通讯作者

科研成果: 期刊稿件会议文章同行评审

摘要

In this paper we report the growth by atomic layer epitaxy (ALE) and optical properties of ZnSe/CdSe:Mn magnetic quantum dots. For samples grown without a ZnSe capping layer, dot densities of the order of 109cm-2 were measured by atomic force microscopy (AFM). In capped samples, the ensemble dot photoluminescence (PL) was observed over a range of energies between 2.1 and 2.5 eV and a spectrally broad emission at 2.15 eV from the internal Mn2+ transition was observed at high Mn concentrations. Single dot spectroscopy was carried out by confocal microscopy and the PL linewidth was measured as a function of Mn concentration. At high Mn concentrations the temporal change in magnetization causes a broadening of the FWHM of lines from single dots of up to 4 meV. However, for low concentrations single dot PL linewidths were resolution limited at <0.2 meV.

源语言英语
页(从-至)586-590
页数5
期刊Journal of Crystal Growth
251
1-4
DOI
出版状态已出版 - 4月 2003
已对外发布
活动Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, 美国
期限: 15 9月 200220 9月 2002

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