Graphene sheets via microwave chemical vapor deposition

G. D. Yuan; W. J. Zhang; Y. Yang; Y. B. Tang; Y. Q. Li; J. X. Wang; X. M. Meng; Z. B. He; C. M.L. Wu; I. Bello; C. S. Lee; S. T. Lee

doi:10.1016/j.cplett.2008.11.059

Graphene sheets via microwave chemical vapor deposition

G. D. Yuan
, W. J. Zhang^*
, Y. Yang
, Y. B. Tang
, Y. Q. Li
, J. X. Wang
, X. M. Meng
, Z. B. He
, C. M.L. Wu
, I. Bello
, C. S. Lee
, S. T. Lee

^*此作品的通讯作者

City University of Hong Kong
Soochow University
CAS - Technical Institute of Physics and Chemistry

科研成果: 期刊稿件 › 文章 › 同行评审

140 引用（Scopus）

摘要

High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ∼500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2-3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.

源语言	英语
页（从-至）	361-364
页数	4
期刊	Chemical Physics Letters
卷	467
期	4-6
DOI	https://doi.org/10.1016/j.cplett.2008.11.059
出版状态	已出版 - 5 1月 2009
已对外发布	是

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10.1016/j.cplett.2008.11.059

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title = "Graphene sheets via microwave chemical vapor deposition",

abstract = "High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ∼500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2-3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.",

author = "Yuan, \{G. D.\} and Zhang, \{W. J.\} and Y. Yang and Tang, \{Y. B.\} and Li, \{Y. Q.\} and Wang, \{J. X.\} and Meng, \{X. M.\} and He, \{Z. B.\} and Wu, \{C. M.L.\} and I. Bello and Lee, \{C. S.\} and Lee, \{S. T.\}",

year = "2009",

month = jan,

day = "5",

doi = "10.1016/j.cplett.2008.11.059",

language = "英语",

volume = "467",

pages = "361--364",

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TY - JOUR

T1 - Graphene sheets via microwave chemical vapor deposition

AU - Yuan, G. D.

AU - Zhang, W. J.

AU - Yang, Y.

AU - Tang, Y. B.

AU - Li, Y. Q.

AU - Wang, J. X.

AU - Meng, X. M.

AU - He, Z. B.

AU - Wu, C. M.L.

AU - Bello, I.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2009/1/5

Y1 - 2009/1/5

N2 - High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ∼500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2-3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.

AB - High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ∼500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2-3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.

UR - https://www.scopus.com/pages/publications/57749096872

U2 - 10.1016/j.cplett.2008.11.059

DO - 10.1016/j.cplett.2008.11.059

M3 - 文章

AN - SCOPUS:57749096872

SN - 0009-2614

VL - 467

SP - 361

EP - 364

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Graphene sheets via microwave chemical vapor deposition

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