Gate-controlled electron-electron interactions in an In0.53 Ga0.47 As/InP quantum well structure

Y. M. Zhou; K. H. Gao; G. Yu; W. Z. Zhou; T. Lin; S. L. Guo; J. H. Chu; N. Dai

doi:10.1016/j.ssc.2009.11.016

Gate-controlled electron-electron interactions in an In_0.53 Ga_0.47 As/InP quantum well structure

Y. M. Zhou
, K. H. Gao
, G. Yu^*
, W. Z. Zhou
, T. Lin
, S. L. Guo
, J. H. Chu
, N. Dai

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

We study the parabolic negative magnetoresistivity in a gated In_0.53Ga_0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron-electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler's theory.

源语言	英语
页（从-至）	251-253
页数	3
期刊	Solid State Communications
卷	150
期	5-6
DOI	https://doi.org/10.1016/j.ssc.2009.11.016
出版状态	已出版 - 2月 2010
已对外发布	是

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10.1016/j.ssc.2009.11.016

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title = "Gate-controlled electron-electron interactions in an In0.53 Ga0.47 As/InP quantum well structure",

abstract = "We study the parabolic negative magnetoresistivity in a gated In0.53Ga0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron-electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler's theory.",

keywords = "A. Quantum well, D. Electron-electron interactions, D. Magnetoresistivity, D. Two-dimensional electron gas",

author = "Zhou, \{Y. M.\} and Gao, \{K. H.\} and G. Yu and Zhou, \{W. Z.\} and T. Lin and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai",

year = "2010",

month = feb,

doi = "10.1016/j.ssc.2009.11.016",

language = "英语",

volume = "150",

pages = "251--253",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "5-6",

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TY - JOUR

T1 - Gate-controlled electron-electron interactions in an In0.53 Ga0.47 As/InP quantum well structure

AU - Zhou, Y. M.

AU - Gao, K. H.

AU - Yu, G.

AU - Zhou, W. Z.

AU - Lin, T.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

PY - 2010/2

Y1 - 2010/2

N2 - We study the parabolic negative magnetoresistivity in a gated In0.53Ga0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron-electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler's theory.

AB - We study the parabolic negative magnetoresistivity in a gated In0.53Ga0.47As/InP quantum well structure where the scattering potential is predominantly long range. This magnetoresistivity is caused by the electron-electron interactions and is fitted to estimate the interaction corrections to the Drude conductivity. These corrections are smaller than the prediction of a recent theory [I.V. Gornyi, A.D. Mirlin, Phys. Rev. Lett. 90 (2003) 076801], and can be quantitatively described by Altshuler's theory.

KW - A. Quantum well

KW - D. Electron-electron interactions

KW - D. Magnetoresistivity

KW - D. Two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/72449144968

U2 - 10.1016/j.ssc.2009.11.016

DO - 10.1016/j.ssc.2009.11.016

M3 - 文章

AN - SCOPUS:72449144968

SN - 0038-1098

VL - 150

SP - 251

EP - 253

JO - Solid State Communications

JF - Solid State Communications

IS - 5-6

ER -

Gate-controlled electron-electron interactions in an In0.53 Ga0.47 As/InP quantum well structure

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Gate-controlled electron-electron interactions in an In_0.53 Ga_0.47 As/InP quantum well structure