GaSb quantum dots growth by liquid phase epitaxy

Shu Hong Hu; Feng Qiu; Ying Fei Lv; Chang Hong Sun; Qi Wei Wang; Jian Hua Guo; Hui Yong Deng; Ning Dai; Qian Dong Zhuang; Min Yin; Anthony Krier

doi:10.3724/SP.J.1010.2013.00220

GaSb quantum dots growth by liquid phase epitaxy

Shu Hong Hu^*
, Feng Qiu
, Ying Fei Lv
, Chang Hong Sun
, Qi Wei Wang
, Jian Hua Guo
, Hui Yong Deng
, Ning Dai
, Qian Dong Zhuang
, Min Yin
, Anthony Krier

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Lancaster University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

源语言	英语
页（从-至）	220-224
页数	5
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	32
期	3
DOI	https://doi.org/10.3724/SP.J.1010.2013.00220
出版状态	已出版 - 6月 2013
已对外发布	是

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title = "GaSb quantum dots growth by liquid phase epitaxy",

abstract = "The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.",

keywords = "Atomic force microscopy, GaSb quantum dots, Liquid Phase Epitaxy, Type-II QDs structure",

author = "Hu, \{Shu Hong\} and Feng Qiu and Lv, \{Ying Fei\} and Sun, \{Chang Hong\} and Wang, \{Qi Wei\} and Guo, \{Jian Hua\} and Deng, \{Hui Yong\} and Ning Dai and Zhuang, \{Qian Dong\} and Min Yin and Anthony Krier",

year = "2013",

month = jun,

doi = "10.3724/SP.J.1010.2013.00220",

language = "英语",

volume = "32",

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TY - JOUR

T1 - GaSb quantum dots growth by liquid phase epitaxy

AU - Hu, Shu Hong

AU - Qiu, Feng

AU - Lv, Ying Fei

AU - Sun, Chang Hong

AU - Wang, Qi Wei

AU - Guo, Jian Hua

AU - Deng, Hui Yong

AU - Dai, Ning

AU - Zhuang, Qian Dong

AU - Yin, Min

AU - Krier, Anthony

PY - 2013/6

Y1 - 2013/6

N2 - The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

AB - The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it's easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

KW - Atomic force microscopy

KW - GaSb quantum dots

KW - Liquid Phase Epitaxy

KW - Type-II QDs structure

UR - https://www.scopus.com/pages/publications/84880029838

U2 - 10.3724/SP.J.1010.2013.00220

DO - 10.3724/SP.J.1010.2013.00220

M3 - 文章

AN - SCOPUS:84880029838

SN - 1001-9014

VL - 32

SP - 220

EP - 224

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 3

ER -

GaSb quantum dots growth by liquid phase epitaxy

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