GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

Ao Zhang; Xiaolin Hao; Jianjun Gao

doi:10.1109/TED.2024.3376311

GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

Ao Zhang
, Xiaolin Hao^*
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

Nantong University
East China Normal University
Hebei Semiconductor Research Institute

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

源语言	英语
页（从-至）	2925-2930
页数	6
期刊	IEEE Transactions on Electron Devices
卷	71
期	5
DOI	https://doi.org/10.1109/TED.2024.3376311
出版状态	已出版 - 1 5月 2024

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10.1109/TED.2024.3376311

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abstract = "A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and \{S\} -parameters for GaN Schottky diodes.",

keywords = "Diode, large signal model, parameter extraction, semiconductor device modeling",

author = "Ao Zhang and Xiaolin Hao and Jianjun Gao",

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AU - Zhang, Ao

AU - Hao, Xiaolin

AU - Gao, Jianjun

PY - 2024/5/1

Y1 - 2024/5/1

N2 - A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

AB - A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and {S} -parameters for GaN Schottky diodes.

KW - Diode

KW - large signal model

KW - parameter extraction

KW - semiconductor device modeling

UR - https://www.scopus.com/pages/publications/85188452489

U2 - 10.1109/TED.2024.3376311

DO - 10.1109/TED.2024.3376311

M3 - 文章

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application

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