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From CuFeS2 to Ba6Cu2FeGe4S16: Rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold

  • Wangzhu Cao
  • , Dajiang Mei*
  • , Yi Yang
  • , Yuanwang Wu
  • , Lingyun Zhang
  • , Yuandong Wu
  • , Xiao He
  • , Zheshuai Lin
  • , Fuqiang Huang
  • *此作品的通讯作者
  • Shanghai University of Engineering Science
  • CAS - Technical Institute of Physics and Chemistry
  • University of Chinese Academy of Sciences
  • East China University of Science and Technology
  • CAS - Shanghai Institute of Ceramics

科研成果: 期刊稿件文章同行评审

摘要

A new germanium-based sulfide, Ba6Cu2FeGe4S16, achieves a band-gap broadening of more than 1 eV relative to CuFeS2. Remarkably, Ba6Cu2FeGe4S16 exhibits excellent comprehensive NLO performance (SHG, 1.5 × AgGaSe2; LDT, 2 × AgGaSe2), satisfying the essential requirements of mid-IR NLO candidates.

源语言英语
页(从-至)14510-14513
页数4
期刊Chemical Communications
55
96
DOI
出版状态已出版 - 2019

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