TY - JOUR
T1 - Flexible graphene field effect transistor with ferroelectric polymer gate
AU - Wang, Xudong
AU - Tang, Minghua
AU - Chen, Yan
AU - Wu, Guangjian
AU - Huang, Hai
AU - Zhao, Xiaolin
AU - Tian, Bobo
AU - Wang, Jianlu
AU - Sun, Shuo
AU - Shen, Hong
AU - Lin, Tie
AU - Sun, Jinglan
AU - Meng, Xiangjian
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2016, Springer Science+Business Media New York.
PY - 2016/7/1
Y1 - 2016/7/1
N2 - A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.
AB - A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.
KW - CVD graphene
KW - Ferroelectric polymer gating
KW - Flexible electronics
KW - P(VDF-TrFE)
UR - https://www.scopus.com/pages/publications/84975708741
U2 - 10.1007/s11082-016-0614-y
DO - 10.1007/s11082-016-0614-y
M3 - 文章
AN - SCOPUS:84975708741
SN - 0306-8919
VL - 48
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 7
M1 - 345
ER -