First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10-3A/cm2 Jg for Si NSFET Scaling

Kun Zhong; Zhaohao Zhang; Tianjiao Xin; Junshuai Chai; Hong Yang; Lei Cao; Siyuan Liu; Yadong Zhang; Jiacheng Shi; Rui Chen; Qiang Zhang; Chunsong Zhao; Qingzhu Zhang; Jianfeng Gao; Junfeng Li; Yongliang Li; Yan Cheng; Huaxiang Yin; Xiaolei Wang; Jun Luo

doi:10.1109/IEDM50572.2025.11353608

First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling

Kun Zhong
, Zhaohao Zhang^*
, Tianjiao Xin
, Junshuai Chai
, Hong Yang
, Lei Cao
, Siyuan Liu
, Yadong Zhang
, Jiacheng Shi
, Rui Chen
, Qiang Zhang
, Chunsong Zhao
, Qingzhu Zhang
, Jianfeng Gao
, Junfeng Li
, Yongliang Li
, Yan Cheng^*
, Huaxiang Yin^*
, Xiaolei Wang
, Jun Luo

^*此作品的通讯作者

物理与电子科学学院

CAS - Institute of Microelectronics
University of Chinese Academy of Sciences
East China Normal University
Huawei Technologies Co., Ltd.

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

For the first time, we demonstrate and integrate an ultra-thin gate dielectric with sub-5 Å EOT enabled by Quasi-Single-Crystal (QSC) HfZrON (HZON) into GAA NSFETs. Through interfacial nitrogen engineering, a distinct QSC grain structure is achieved in HZON, featuring excellent crystallinity, exceptionally large grain size (up to ~180 nm) and high t&o-phase ratio (96%), which yields a record-high κ value of 67. By leveraging the ultra-high κ and suppressed defect density of QSC-HZON, sub-5 Å EOT with extremely low leakage (9×10^-2 A/cm² with 4.6 Å EOT; 4×10^-3 A/cm² with 4.9 Å EOT) and high reliability are realized on MOSCAPs. The QSC-HZON is further integrated into n-NSFETs, achieving ~35% I_on enhancement while preserving comparable reliability to conventional devices, providing a straightforward way for NSFETs' performance improvement and further scaling.

源语言	英语
主期刊名	2025 IEEE International Electron Devices Meeting, IEDM 2025
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9798331567859
DOI	https://doi.org/10.1109/IEDM50572.2025.11353608
出版状态	已出版 - 2025
活动	2025 IEEE International Electron Devices Meeting, IEDM 2025 - San Francisco, 美国期限: 6 12月 2025 → 10 12月 2025

出版系列

姓名	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

会议

会议	2025 IEEE International Electron Devices Meeting, IEDM 2025
国家/地区	美国
市	San Francisco
时期	6/12/25 → 10/12/25

访问文件

10.1109/IEDM50572.2025.11353608

其它文件与链接

链接到 Scopus 的出版物

引用此

Zhong, K., Zhang, Z., Xin, T., Chai, J., Yang, H., Cao, L., Liu, S., Zhang, Y., Shi, J., Chen, R., Zhang, Q., Zhao, C., Zhang, Q., Gao, J., Li, J., Li, Y., Cheng, Y., Yin, H., Wang, X., & Luo, J. (2025). First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling. 在 2025 IEEE International Electron Devices Meeting, IEDM 2025 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM50572.2025.11353608

Zhong, Kun ; Zhang, Zhaohao ; Xin, Tianjiao 等. / First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling. 2025 IEEE International Electron Devices Meeting, IEDM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{4c2470c78c5c43cb918535ca8bb4e8e6,

title = "First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 {\AA} EOT and 4×10-3A/cm2 Jg for Si NSFET Scaling",

abstract = "For the first time, we demonstrate and integrate an ultra-thin gate dielectric with sub-5 {\AA} EOT enabled by Quasi-Single-Crystal (QSC) HfZrON (HZON) into GAA NSFETs. Through interfacial nitrogen engineering, a distinct QSC grain structure is achieved in HZON, featuring excellent crystallinity, exceptionally large grain size (up to \textasciitilde{}180 nm) and high t\&o-phase ratio (96\%), which yields a record-high κ value of 67. By leveraging the ultra-high κ and suppressed defect density of QSC-HZON, sub-5 {\AA} EOT with extremely low leakage (9×10-2 A/cm2 with 4.6 {\AA} EOT; 4×10-3 A/cm2 with 4.9 {\AA} EOT) and high reliability are realized on MOSCAPs. The QSC-HZON is further integrated into n-NSFETs, achieving \textasciitilde{}35\% Ion enhancement while preserving comparable reliability to conventional devices, providing a straightforward way for NSFETs' performance improvement and further scaling.",

author = "Kun Zhong and Zhaohao Zhang and Tianjiao Xin and Junshuai Chai and Hong Yang and Lei Cao and Siyuan Liu and Yadong Zhang and Jiacheng Shi and Rui Chen and Qiang Zhang and Chunsong Zhao and Qingzhu Zhang and Jianfeng Gao and Junfeng Li and Yongliang Li and Yan Cheng and Huaxiang Yin and Xiaolei Wang and Jun Luo",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE International Electron Devices Meeting, IEDM 2025 ; Conference date: 06-12-2025 Through 10-12-2025",

year = "2025",

doi = "10.1109/IEDM50572.2025.11353608",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2025 IEEE International Electron Devices Meeting, IEDM 2025",

address = "美国",

}

Zhong, K, Zhang, Z, Xin, T, Chai, J, Yang, H, Cao, L, Liu, S, Zhang, Y, Shi, J, Chen, R, Zhang, Q, Zhao, C, Zhang, Q, Gao, J, Li, J, Li, Y, Cheng, Y, Yin, H, Wang, X & Luo, J 2025, First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling. 在 2025 IEEE International Electron Devices Meeting, IEDM 2025. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2025 IEEE International Electron Devices Meeting, IEDM 2025, San Francisco, 美国, 6/12/25. https://doi.org/10.1109/IEDM50572.2025.11353608

First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling. / Zhong, Kun; Zhang, Zhaohao; Xin, Tianjiao 等.
2025 IEEE International Electron Devices Meeting, IEDM 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (Technical Digest - International Electron Devices Meeting, IEDM).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10-3A/cm2 Jg for Si NSFET Scaling

AU - Zhong, Kun

AU - Zhang, Zhaohao

AU - Xin, Tianjiao

AU - Chai, Junshuai

AU - Yang, Hong

AU - Cao, Lei

AU - Liu, Siyuan

AU - Zhang, Yadong

AU - Shi, Jiacheng

AU - Chen, Rui

AU - Zhang, Qiang

AU - Zhao, Chunsong

AU - Zhang, Qingzhu

AU - Gao, Jianfeng

AU - Li, Junfeng

AU - Li, Yongliang

AU - Cheng, Yan

AU - Yin, Huaxiang

AU - Wang, Xiaolei

AU - Luo, Jun

PY - 2025

Y1 - 2025

N2 - For the first time, we demonstrate and integrate an ultra-thin gate dielectric with sub-5 Å EOT enabled by Quasi-Single-Crystal (QSC) HfZrON (HZON) into GAA NSFETs. Through interfacial nitrogen engineering, a distinct QSC grain structure is achieved in HZON, featuring excellent crystallinity, exceptionally large grain size (up to ~180 nm) and high t&o-phase ratio (96%), which yields a record-high κ value of 67. By leveraging the ultra-high κ and suppressed defect density of QSC-HZON, sub-5 Å EOT with extremely low leakage (9×10-2 A/cm2 with 4.6 Å EOT; 4×10-3 A/cm2 with 4.9 Å EOT) and high reliability are realized on MOSCAPs. The QSC-HZON is further integrated into n-NSFETs, achieving ~35% Ion enhancement while preserving comparable reliability to conventional devices, providing a straightforward way for NSFETs' performance improvement and further scaling.

AB - For the first time, we demonstrate and integrate an ultra-thin gate dielectric with sub-5 Å EOT enabled by Quasi-Single-Crystal (QSC) HfZrON (HZON) into GAA NSFETs. Through interfacial nitrogen engineering, a distinct QSC grain structure is achieved in HZON, featuring excellent crystallinity, exceptionally large grain size (up to ~180 nm) and high t&o-phase ratio (96%), which yields a record-high κ value of 67. By leveraging the ultra-high κ and suppressed defect density of QSC-HZON, sub-5 Å EOT with extremely low leakage (9×10-2 A/cm2 with 4.6 Å EOT; 4×10-3 A/cm2 with 4.9 Å EOT) and high reliability are realized on MOSCAPs. The QSC-HZON is further integrated into n-NSFETs, achieving ~35% Ion enhancement while preserving comparable reliability to conventional devices, providing a straightforward way for NSFETs' performance improvement and further scaling.

UR - https://www.scopus.com/pages/publications/105033556861

U2 - 10.1109/IEDM50572.2025.11353608

DO - 10.1109/IEDM50572.2025.11353608

M3 - 会议稿件

AN - SCOPUS:105033556861

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2025 IEEE International Electron Devices Meeting, IEDM 2025

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2025 IEEE International Electron Devices Meeting, IEDM 2025

Y2 - 6 December 2025 through 10 December 2025

ER -

Zhong K, Zhang Z, Xin T, Chai J, Yang H, Cao L 等. First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling. 在 2025 IEEE International Electron Devices Meeting, IEDM 2025. Institute of Electrical and Electronics Engineers Inc. 2025. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM50572.2025.11353608

First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10-3A/cm2 Jg for Si NSFET Scaling

摘要

出版系列

会议

访问文件

其它文件与链接

指纹

引用此

First Demonstration of Quasi-Single-Crystal (QSC) HfZrON Gate Dielectric (κ=67) with sub-5 Å EOT and 4×10^-3A/cm² J_g for Si NSFET Scaling