摘要
The field emission from heat treated cobalt containing carbon films was reported. The films were grown on glass substrates by means of filtered cathodic vacuum arc (FCVA) technique at low temperature in acetylene and nitrogen ambients. The heat-treated films retained smooth surface with a root mean square roghness, which could be used in the fabrication of gated emitter array for field emission displays.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 950-953 |
| 页数 | 4 |
| 期刊 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 卷 | 19 |
| 期 | 3 |
| DOI | |
| 出版状态 | 已出版 - 5月 2001 |
| 已对外发布 | 是 |
| 活动 | 13th International Vaccum Microelectronics Conference - Guangzhou, 中国 期限: 14 8月 2000 → 17 8月 2000 |
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